Development of High Performance Indium Tin Oxide Films at Room Temperature by Plasma-Damage Free Neutral Beam Sputtering System

  • Published : 2007.08.27

Abstract

New ITO thin film of good performance has been developed by brand-new, plasma-damage-free sputtering process at the room temperature. The room temperature-processed ITO films with optimized conditions as neutral beam acceleration bias of -30V and In & Sn composition ratio of 99:01 gives lower resistivity as $4.22{\times}10^{-4}{\Omega}-cm$ and higher transmittance over 90% a wavelength of 550 nm. The transmission electron microscope (TEM) images of the films show a nano-crystalline structure.

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