한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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- Pages.1340-1343
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- 2007
An integrated photodiode fabricated by low temperature poly-Si TFT process
- Lee, Seung-Min (School of Electrical & Electronic Engineering, Yonsei University) ;
- Kim, Dong-Lim (School of Electrical & Electronic Engineering, Yonsei University) ;
- Jung, Tae-Hoon (School of Electrical & Electronic Engineering, Yonsei University) ;
- Heo, Kon-Yi (School of Electrical & Electronic Engineering, Yonsei University) ;
- Kim, Hyun-Jae (School of Electrical & Electronic Engineering, Yonsei University)
- 발행 : 2007.08.27
초록
We have simultaneously fabricated LTPS TFTs and integrated photodiodes on the same glass substrates without any additional LTPS process. The structure of an integrated photodiode is a lateral p-i-n diode with a gate. The performances of a photodiode were improved at a negative gate voltage.