Surface Treatment Effect on Electrical Characteristics of Ink-Jet Printed Pentacene OTFTs Employing Suspended Source/Drain Electrode

  • Park, Young-Hwan (Information Display Research Center, Korea Electronics Technology Institute, Dept. of Electronics and Computer Engineering, Dankook University) ;
  • Kim, Yong-Hoon (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Kang, Jung-Won (Dept. of Electronics and Computer Engineering, Dankook University) ;
  • Oh, Myung-Hwan (Dept. of Electronics and Computer Engineering, Dankook University) ;
  • Han, Jeong-In (Information Display Research Center, Korea Electronics Technology Institute)
  • Published : 2007.08.27

Abstract

The effect of gate insulator surface treatment on electrical characteristics of bottom contact (BC) and suspended source/drain (SSD) organic thinfilm transistors (OTFTs) was studied. Triisopropylsilylethynyl pentacene was used as an active material and was printed by ink-jet printing method. In case of the BC OTFTs, threshold voltage was shifted from positive to near zero, and the fieldeffect mobility was increased when the gate insulator surface was treated with hexamethyldisilazane. However, in case of SSD OTFT, threshold voltage shift was not observed and the field-effect mobility was decreased.

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