한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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- Pages.1298-1300
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- 2007
Investigation of the ZnO based TFT interface properties with synchrotron radiation analysis
- Choi, Jong-Kwon (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
- Baik, Min-Kyung (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
- Joo, Min-Ho (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
- Park, Kyu-Ho (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
- Lee, Jay-Man (Digital Display Research Laboratory, LG Electronics) ;
- Kim, Myung-Seop (Digital Display Research Laboratory, LG Electronics) ;
- Yang, Joong-Hwan (Digital Display Research Laboratory, LG Electronics)
- 발행 : 2007.08.27
초록
The interface between SiNx and ZnO was investigated with Near Edge X-ray Absorption Fine Structure (NEXAFS) for ZnO based thin film transistor (TFT) applications. Impurity species were interstitial