Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2007.06a
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- Pages.437-440
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- 2007
A New Technique to Improve ZnO-based FBAR Device Performances
- Mai, Linh (School of Engineering, Information & Communications University (ICU)) ;
- Lee, Jae-Young (School of Engineering, Information & Communications University (ICU)) ;
- Pham, Van Su (School of Engineering, Information & Communications University (ICU)) ;
- Yoon, Gi-Wan (School of Engineering, Information & Communications University (ICU))
- Published : 2007.06.01
Abstract
This paper presents the improvement of the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices fabricated on multilayer Bragg reflectors (BRs) based on inserting ultra-thin chromium (Cr) adhesion layers into BRs and post-annealing processes. The measurements show excellent improvement of return loss