Proceedings of the KSME Conference (대한기계학회:학술대회논문집)
- 2007.05a
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- Pages.518-520
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- 2007
Deformation pathway of semiconductor materials in nanometer scale
반도체 소재의 나노미터 스케일의 변형거동 해석
- Published : 2007.05.30
Abstract
Since all essential property of semiconductor materials are structure-sensitive, the understanding of the deformation mechanism and the deformed structure which can be formed in the nanometer-scale devices is very crucial. To investigate the deformation mechanism and the corresponding structures, nanometer-scale contact loading simulations are carried out using molecular dynamics in silicon and gallium-arsenide.