인위적으로 발생시킨 과도 전자파에 노출된 CMOS와 TTL IC의 오동작 및 파괴 특성

Breakdown and Destruction Characteristics of the CMOS and TTL ICs by Artificial Electromagnetic Waves

In this paper the influence of CMOS- and TTL-technology on the breakdown and destruction effects by artificial electromagnetic waves is determined. Different electronic devices(3 CMOS & 5 TTL) were exposed to high amplitude electromagnetic waves. CMOS ICs were occurred only destruction below the max electric field and TTL ICs were occurred breakdown and destruction below the max electric field. The SEM analysis of the destruction devices showed onchipwire and bondwire destruction like melting due to thermal effect. The test results are applied to the data which understand electromagnetic wave effects of electronic equipments.