대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

상변화 메모리 응용을 위한 Sb-doped $Ge_{1}Se_{1}Te_{2}$ 박막의 특성

The properties of Sb-doped $Ge_{1}Se_{1}Te_{2}$ thin films application for Phase-Change Random Access Memory

  • 남기현 (광운대학교 전자재료공학과) ;
  • 최혁 (광운대학교 전자재료공학과) ;
  • 구용운 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Nam, Ki-Hyeon (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Choi, Hyuk (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Ju, Long-Yun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • 발행 : 2007.07.18
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Phase-change random access memory(PRAM) has many advantages compare with the existing memory. For example, fast programming speed, low programming voltage, high sensing margin, low power consume and long cyclability of read/write. Though it has many advantages, there are some points which must be improved. So, we invented and studied new constitution of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. In this paper, we studied in order to make set operation time and reset operation voltage reduced. In the present work, by alloying Sb in $Ge_{1}Se_{1}Te_{2}$. we could confirm that improved its set operation time and reset operation voltage. As a result, the method of Sb-alloyed $Ge_{1}Se_{1}Te_{2}$ can be solution to decrease the set operation time and reset operation voltage.

키워드