PMC 응용을 위한 비정질 칼코게나이드 박막의 열적특성

Investigation of thermal Characteristics with Amorphous Chalcogenide Thin Film for Programmable Metallization Cell

  • 구용운 (광운대학교 전자재료공학과) ;
  • 남기현 (광운대학교 전자재료공학과) ;
  • 최혁 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Ju, Long-Yun (Dept. of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Nam, Ki-Hyeon (Dept. of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Choi, Hyuk (Dept. of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Dept. of Electronic Materials Eng. Kwangwoon Univ.)
  • 발행 : 2007.07.18

초록

In the present works, we investigate the thermal characteristics on Ag/$As_{2}S_{3}$ and Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film structure for PMC (Programmable Metallization Cell).As the results of resistance change with the temperature on Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film, the resistance was abruptly dropped from the initial resistance of 1.32 M ${\Omega}$ to the saturated value of 800 ${\Omega}$ at $203^{\circ}C$. On the other hand, the resistance increased to 1.3 $M{\Omega}$ at $219^{\circ}C$.

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