Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Analysis of IGBT with Hole barrier layer and Diverter

Hole barrier layer 와 Diverter 구조의 IGBT에 관한 특성 분석

  • Yu, Seung-Woo (Dept. of Electrical Engineering, Korea University) ;
  • Shin, Ho-Hyun (Dept. of Electrical Engineering, Korea University) ;
  • Kim, Yo-Hann (Dept. of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (Dept. of Electrical Engineering, Korea University)
  • Published : 2007.07.18
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Abstract

This is paper, a new structure to effectively improve the Vce(sat) voltage and latch-up current in NPT type IGBTs with hole barrier layer and diverter. The hole barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n-layer. And the diverter significantly reduce hole current from flowing into the p-layer and improve latch up current. Analysis on the Breakdown voltage shows identical values compared to existing Conventional IGBT structures. This shows an improvement on Vce(sat) and Latct-up current without lowering other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

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