Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A 915-MHz RF CMOS Low Power High Gain Amplifier using Q-enhancement Technique for WPAN

  • Han, Dong-Ok (Central R&D Institute, Samsung Electro-Mechanics) ;
  • Kim, Eung-Ju (Central R&D Institute, Samsung Electro-Mechanics) ;
  • Park, Tah-Joon (Central R&D Institute, Samsung Electro-Mechanics)
  • Published : 2006.06.21
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Abstract

In this paper low power high gain amplifier is suitable for application in low power systems was designed and fabricated. The amplifier used both subthreshold bias for low power and positive feedback Q-enhancement technique for high gain. The amplifier used TSCM $0.18{\mu}m$ RF CMOS technology measures a power gain of 32.3dB, a quality factor of 366 and a power consumption of 3mW in a supply voltage of 1.8V.

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