Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Dual-Band CMOS Low-Noise Amplifier

  • Published : 2006.06.21
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Abstract

This paper presents a switch type 2.4/5.8 GHz dual band low-noise amplifier, designed with $0.13{\mu}m$ RF CMOS technology. Using MOS switch allows the LNA to have two different input transconductance and output capacitance modes. Given supply voltage of 1.2 V, the simulation exhibits gains of 8.1 dB and 17.1 dB, noise figures of 3.1 dB and 2.57 dB and power consumptions of 13.0 mW and 10.2 mW at 2.4 GHz and 5.8 GHz, respectively.

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