Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Study of performance and characteristics of InP-composite channel MHEMT for High Breakdown Voltage

높은 항복전압을 위한 InP 합성 채널 MHEMT의 성능과 특성에 대한 연구

  • Choi, Seok-Gyu (Millimeter-wave INnovation Research Center (MINT) Dongguk University) ;
  • Beak, Young-Hyun (Millimeter-wave INnovation Research Center (MINT) Dongguk University) ;
  • Han, Min (Millimeter-wave INnovation Research Center (MINT) Dongguk University) ;
  • Lee, Seong-Dea (Millimeter-wave INnovation Research Center (MINT) Dongguk University) ;
  • Rhee, Jin-Koo (Millimeter-wave INnovation Research Center (MINT) Dongguk University)
  • 최석규 (동국대학교 밀리미터파 신기술 연구 센터) ;
  • 백용현 (동국대학교 밀리미터파 신기술 연구 센터) ;
  • 한민 (동국대학교 밀리미터파 신기술 연구 센터) ;
  • 이성대 (동국대학교 밀리미터파 신기술 연구 센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구 센터)
  • Published : 2006.06.21
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Abstract

To perform the comparative study, we experimented on two differential epitaxial structures, the conventional Metamorphic High Electron Mobility Transistor (MHEMT) using the InAlAs/InGaAs structure and the InP-composite channel MHEMT adopting the InAlAs/InGaAs/InP/n-InP structure. Compared to the conventional MHEMT, the InP-composite channel MHEMT shows improved breakdown performance; over about 3.5 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite channel MHEMT than that of the conventional MHEMT.

Keywords