Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
- /
- Pages.356-357
- /
- 2006
Properties of $SnO_2$ Thin Films Depending on Reaction Parameter
반응 변수에 따른 $SnO_2$ 박막의 특성
- Lee, Jeong-Hoon (Chungbuk Univ.) ;
- Jang, Gun-Eik (Chungbuk Univ.) ;
- Kim, Kyoung-Won (Chungbuk Univ.) ;
- Son, Sang-Hee (Cheongju Univ.)
- Published : 2006.06.22
Abstract
Tin oxide thin films have been prepared on display glass from mixtures of dibutyl tin diacetate as a tin source, oxygen as an oxidant by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The relationships between the properties of tin oxide thin films and various reaction parameters such as the deposition temperature, deposition time and the oxygen gas flow rate were studied. As the deposition temperature increased, the texture plane of