한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

수직 방향 전류를 이용한 폴리실리콘 포토다이오드에 관한 연구

Investigation of Polycrystalline Silicon Photodiodes Utilizing Vertically Directed Current Path

  • 송영선 (연세대학교 전기전자공학과) ;
  • 윤일구 (연세대학교 전기전자공학과)
  • Song, Young-Sun (Department of Electrical and Electronics Engineering, Yonsei University) ;
  • Yun, Il-Gu (Department of Electrical and Electronics Engineering, Yonsei University)
  • 발행 : 2006.06.22
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초록

In this paper, the polycrystalline silicon photodiodes utilizing vertically directed current path are investigated. The location of electrodes is considered with the grain direction and the current path. The relationships between grain boundaries and characteristics of photodiode are simulated to apply the vertically grown polycrystalline silicon to photodiodes. From the results, the vertically grown polycrystalline silicon photodiode is a potential candidate for CMOS image sensor. However, the increment of dark current related to grain boundaries should be reduced.

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