Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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MOSFET Characteristics with Channel Variation fabricated by $0.35-{\mu}m$ Process

$0.35{\mu}m$공정을 이용하여 제작된 MOSFET의 채널 변화에 따른 특성연구

  • Kang, Jung-Han (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Ahn, Min-Su (Dept. of Electrical and Electronic Engineering, Yonsei University) ;
  • Yun, Il-Gu (Dept. of Electrical and Electronic Engineering, Yonsei University)
  • 강정한 (연세대학교 전기전자공학과) ;
  • 안민수 (연세대학교 전기전자공학과) ;
  • 윤일구 (연세대학교 전기전자공학과)
  • Published : 2006.06.22
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Abstract

In this paper, intrinsic n channel MOSFETs with external parasitic components are modeled. Using sensitivity analysis, effective parasitic components are tested and the optimized model is extracted. The extracted model is fitted to the measured S-parameters with different channel width. Based on this methodology, this method, external parasitic components that affect MOSFET operations can be analyzed and modeled.

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