Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.145-146
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- 2006
Alanysis of the Optical Properties of p-type ZnO Thin Films Doped by P based on Ampouele-tube Method
Ampoule-tube 법으로 Phosphorus를 도핑한 P형 ZnO 박막의 광학적 특성 분석
- Yoo, In-Sung (Wonkwang Univ.) ;
- Oh, Sang-Hyun (Wonkwang Univ.) ;
- So, Soon-Jin (School of Electrical Electronic and Information Engineering. Knowledge*On semiconductor Inc.) ;
- Park, Choon-Bae (Wonkwang Univ.)
- Published : 2006.11.09
Abstract
The most Important research topic in the development of ZnO LED and LD is the production of p-type ZnO thin film that has minimal stress with outstanding stoichiometric ratio. In this study, Phosphorus diffused into the undoped ZnO thin films using the ampoule-tube method for the production of p-type znO thin films. The undoped ZnO thin films were deposited by RF magnetron sputtering system on