Amorphous Silicon Gate Driver with High Stability

  • Koo, Ja-Hun (Dept. of Information Display and Advanced Display Research Center, Kyung Hee University) ;
  • Choi, Jae-Won (Dept. of Information Display and Advanced Display Research Center, Kyung Hee University) ;
  • Kim, Young-Seoung (Dept. of Information Display and Advanced Display Research Center, Kyung Hee University) ;
  • Kang, Moon-Hyo (Dept. of Information Display and Advanced Display Research Center, Kyung Hee University) ;
  • Jang, Jin (Dept. of Information Display and Advanced Display Research Center, Kyung Hee University)
  • 발행 : 2006.08.22

초록

Integrated a-Si:H gate driver with high reliability has been designed and simulated. The proposed a-S:H gate driver has only one reset transistor under AC driving for P and output node. These reset transistors show much less degradation than those under DC driving. The simulation results show that the lifetime and response time are improved significantly compared with those of the prior circuit.

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