한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.501-504
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- 2006
SLS Crystallized Poly-Si TFT Technology
- Ryu, Myung-Kwan (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Kim, Eok-Su (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Kook, Yoon-Boo (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Park, Jung-Ho (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Yoon, Bin-Nal (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Kwon, Hyuk-Soon (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Hwang, Hyun-Ki (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Son, Gon (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Kim, Cheon-Hong (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Kim, Seung-Soo (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Jun, Jung-Mok (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd) ;
- Lee, Jung-Yeal (Research Center, BOE HYDIS TECHNOLOGY Co. Ltd)
- Published : 2006.08.22
Abstract
The Process technology for uniform SLS poly-Si and performance enhancement of furnace activated poly-Si TFTs are reported. By strictly optimizing SLS optics, threshold voltage variation in pixel TFTs was remarkably decreased and the non-uniformity such as SLS shot mark was removed. Optimized doping process for low sheet resistance and passivation annealing are critical for the enhancement of device performances.
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