한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

2.2 inch qqVGA AMOLED drived by ultra low temperature poly silicon (ULTPS) TFT direct fabricated below $200^{\circ}C$

  • Kwon, Jang-Yeon (Display Device & Material Lab, Samsung Advanced Institute of Technology (SAIT)) ;
  • Jung, Ji-Sim (Display Device & Material Lab, Samsung Advanced Institute of Technology (SAIT)) ;
  • Park, Kyung-Bae (Display Device & Material Lab, Samsung Advanced Institute of Technology (SAIT)) ;
  • Kim, Jong-Man (Display Device & Material Lab, Samsung Advanced Institute of Technology (SAIT)) ;
  • Lim, Hyuck (Display Device & Material Lab, Samsung Advanced Institute of Technology (SAIT)) ;
  • Lee, Sang-Yoon (Display Device & Material Lab, Samsung Advanced Institute of Technology (SAIT)) ;
  • Kim, Jong-Min (Display Device & Material Lab, Samsung Advanced Institute of Technology (SAIT)) ;
  • Noguchi, Takashi (Ryukyu University) ;
  • Hur, Ji-Ho (Dept. of Information Display, Kyung Hee University) ;
  • Jang, Jin (Dept. of Information Display, Kyung Hee University)
  • 발행 : 2006.08.22
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below $200^{\circ}C$. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over $20cm^2/Vsec$ was fabricated on transparent plastic substrate and drived OLED display successfully.

키워드