대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

TFT의 길이와 두께에 관한 특성

Characterization of length and width of poly-silicon thin film transistors

  • 이정인 (성균관대학교 정보통신소자연구실) ;
  • 황성현 (성균관대학교 정보통신소자연구실) ;
  • 정성욱 (성균관대학교 정보통신소자연구실) ;
  • 장경수 (성균관대학교 정보통신소자연구실) ;
  • 이광수 (성균관대학교 정보통신소자연구실) ;
  • 정호균 (삼성 SDI) ;
  • 최병덕 (삼성 SDI) ;
  • 이기용 (삼성 SDI) ;
  • 이준신 (성균관대학교 정보통신소자연구실)
  • Lee, Jeoung-In (School of Information and Communication Englnnerlng, Sungkyunkwon University) ;
  • Hwang, Sung-Hyun (School of Information and Communication Englnnerlng, Sungkyunkwon University) ;
  • Jung, Sung-Wook (School of Information and Communication Englnnerlng, Sungkyunkwon University) ;
  • Jang, Kyung-Soo (School of Information and Communication Englnnerlng, Sungkyunkwon University) ;
  • Lee, Kwang-Soo (School of Information and Communication Englnnerlng, Sungkyunkwon University) ;
  • Chung, Ho-Kyoon (SAMSUNG SDl CO., LTD) ;
  • Choi, Byoung-Deog (SAMSUNG SDl CO., LTD) ;
  • Lee, Ki-Yong (SAMSUNG SDl CO., LTD) ;
  • Yi, Jun-Sin (School of Information and Communication Englnnerlng, Sungkyunkwon University)
  • 발행 : 2006.10.27
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초록

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TITs performance. Transfer characteristics of n-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of $2-30{\mu}m$ has been investigated. In this paper, we analyzed the data of n-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current (I_{DSAT}$), and transconductance ($g_m$) of n-channel poly-Si thin film transistors with various channel lengths and widths.

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