PES 기판상에 제작한 ITO 박막의 특성

Characteristics of ITO thin films prepared on PES substarte

The ITO thin films were prepared by Facing Targets Sputtering(FTS) method on polyethersulfon(PES) substrate. The ITO thin films were deposited with the film thickness of 100nm at room temperature and working gas pressure of 1 mTorr. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were evaluated by Hall Effect Measurement(EGK) and UV-VIS spectrometer(HP), respectively. From the results, the ITO thin films was deposited was with a resistivity $8.3{\times}10^{-4}[{\Omega}-cm]$ and transmittance over 80% in the visible range.