대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
- /
- Pages.32-33
- /
- 2006
상변화 메모리 응용을 위한 ${Ge_1}{Se_1}{Te_2}$ 비정질 칼코게나이드 박막의 전도 록성
Conductivity Characteristics of ${Ge_1}{Se_1}{Te_2}$ Amorphous Chalcogenide Thin Film for the Phase-Change Memory Application
- Choi, Hyuk (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Kim, Hyun-Gu (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
- 발행 : 2006.10.27
초록
As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over
키워드