대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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- Pages.34-35
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- 2006
1mm의 채널을 갖는 ZnO 투명 박막 트랜지스터
Transparent ZnO thin film transistor with long channel length of 1mm
- 이충희 (연세대학교 전기전자공학과) ;
- 안병두 (연세대학교 전기전자공학과) ;
- 오상훈 (연세대학교 전기전자공학과) ;
- 김건희 (연세대학교 전기전자공학과) ;
- 이상렬 (연세대학교 전기전자공학과)
- Lee, Choong-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Ahn, Byung-Du (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Oh, Sang-Hoon (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Kim, Gun-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
- 발행 : 2006.10.27
초록
Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode,
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