대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

1mm의 채널을 갖는 ZnO 투명 박막 트랜지스터

Transparent ZnO thin film transistor with long channel length of 1mm

  • 이충희 (연세대학교 전기전자공학과) ;
  • 안병두 (연세대학교 전기전자공학과) ;
  • 오상훈 (연세대학교 전기전자공학과) ;
  • 김건희 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Lee, Choong-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Ahn, Byung-Du (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Oh, Sang-Hoon (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Gun-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
  • 발행 : 2006.10.27
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초록

Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.

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