Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2006.11a
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- Pages.14.2-14.2
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- 2006
Characteristics of GaN nanowire transistors with hafnium oxide dielectrics
$HfO_2$ 게이트 유전막을 이용한 GaN 나노선 FET의 특성
- Published : 2006.11.03