Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.07c
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- Pages.1384-1385
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- 2006
Polishing Characteristics of Pt Electrode Materials by Addition of Oxidizer
산화제 첨가에 따른 백금 전극 물질의 연마 특성
- Ko, Pil-Ju (Dept. of Electrical Eng., Chosun Univ.) ;
- Kim, Nam-Hoon (Research Institute of Energy Resources Technology, Chosun Univ.) ;
- Lee, Woo-Sun (Dept. of Electrical Eng., Chosun Univ.)
- Published : 2006.07.12
Abstract
Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of
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