Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.07c
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- Pages.1370-1371
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- 2006
Characteristics of N-Type Extended Drain Silicon Controlled Rectifier ESD Protection Device
NED-SCR 정전기보호소자의 특성
Abstract
An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latchup problem during normal operation. However, a modified NEDSCR device with proper junction / channel engineering demonstrates itself with both the excellent ESD protection performance and the high latchup immunity.
Keywords