Dielectric properties of MgO doped $(Ba_{0.5}Sr_{0.5})TiO_3$ thick films

MgO가 첨가된 $(Ba_{0.5}Sr_{0.5})TiO_3$ 후막의 유전특성

The dielectric properties of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) and MgO-doped BST ceramics were investigated for tunable microwave applications by sol-gel method. The effects of MgO mixing with BST. It is observed that Mg substitution into BST causes a shift in the cubic-tetragonal BST Phase transition peak to a lower temperature. MgO-substituted BST and MgO-mixed phases exhibit homogeneous and broadened BST phase transition peaks. Mg substitution into BST has a significant effect on the grain sife reduction. Dielectric constant and loss is inhanced with decrease MgO dopant.