Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.07c
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- Pages.1351-1352
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- 2006
A Characteristics on Impedance of Degraded Thyristor with Heat and Voltage Stress
열화된 사이리스터 소자의 임피던스 특성
- Seo, Kil-Soo (Korea Electrotechnology Research Institute, Power Semiconductor Research Group) ;
- Kim, Hyung-Woo (Korea Electrotechnology Research Institute, Power Semiconductor Research Group) ;
- Kim, Ki-Hyun (Korea Electrotechnology Research Institute, Power Semiconductor Research Group) ;
- Kim, Nam-Kyun (Korea Electrotechnology Research Institute, Power Semiconductor Research Group)
- 서길수 (한국전기연구원 전력반도체연구그룹) ;
- 김형우 (한국전기연구원 전력반도체연구그룹) ;
- 김기현 (한국전기연구원 전력반도체연구그룹) ;
- 김남균 (한국전기연구원 전력반도체연구그룹)
- Published : 2006.07.12
Abstract
In this paper, the impedance properties of degraded thyristor with heat and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100-10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.
Keywords