The Study of Ni-Pd Alloy Characteristics to Form a NiSi for Shallow S/D Junction

Shallow S/D Junction에 적용 가능한 NiSi를 형성하기 위한 Ni-Pd 합금의 특성 연구

  • Lee, Won-Jae (Dept. of Electronics Engineering, Chungnam National University) ;
  • Oh, Soon-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Agchbayar, Tuya (Dept. of Electronics Engineering, Chungnam National University) ;
  • Yun, Jang-Gn (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim, Yong-Jin (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhang, Ying-Ying (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhong, Zhun (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim, Do-Woo (Dept. of Electronics Engineering, Chungnam National University) ;
  • Cha, Han-Seob (R&D Division, MagnaChip Semiconductor) ;
  • Heo, Sang-Bum (R&D Division, MagnaChip Semiconductor) ;
  • Wang, Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
  • Published : 2005.11.26

Abstract

In this paper, the formation and thermal stability of Ni-silicide using Ni-Pd alloys is studied for ultra shallow S/D junction of nano-scale CMOSFETs. There are no different effects when Ni-Pd is used in single structure and TiN capping structure. But, in case of Cobalt interlayer structure, it was found that Pure Ni had lower sheet resistance than Ni-Pd, because of a thick silicide. Also, Ni-Pd has merits that surface of silicide and interface between silicide and silicon have a good morphology characteristics. As a result, Ni-Pd is an optimal candidate for shallow S/D junction when cobalt is used for thermal stability.

Keywords