Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
- /
- Pages.174-175
- /
- 2005
Initial growth behavior of SiC homoepitaxy in hot-wall CVD
Hot-wall CVD에서의 SiC 단결정 박막의 초기 성장 거동
- Bahng, Wook (KERI) ;
- Cheong, Hui-Jong (Dongeui Univ.) ;
-
Kang, In-Ho
(KERI)
;
-
Kim, Sang-Cheol
(KERI)
;
-
Han, Hyeon-Sook
(Kyungnam Univ.)
;
-
Kim, Nam-Kyun
(KERI)
- Published : 2005.07.07
Abstract
Initial growth stage was investigated for SiC homoepitaxial film growth using 'step controlled epitaxy' technique. When the off angel direction is located parallel along to the gas flow direction, the smoother surface can be obtained. On the on axis substrates, selective etching was detected both the etching and growth condition. It was deduced that the high ratio of C/Si in the source gas results in well developed steps and etched spiral around micropipes.