Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
권호 표지

Graphoepitaxy of ZnO layers grown on periodic structured Si substrates

주기적 표면 구조의 SiO$_2$ 기판을 이용한 ZnO박막의 Graphoepitaxy

  • Jung, Jin-U (Major of Semiconductor Physics, Korea Maritime University) ;
  • Ahn, Hyeon-Cheol (Major of Semiconductor Physics, Korea Maritime University) ;
  • Lee, Chang-Yong (Major of Semiconductor Physics, Korea Maritime University) ;
  • Kim, Gwang-Hui (Major of Semiconductor Physics, Korea Maritime University) ;
  • Choi, Seok-Cheol (Major of Semiconductor Physics, Korea Maritime University) ;
  • Lee, Tae-Hun (Major of Semiconductor Physics, Korea Maritime University) ;
  • Park, Seung-Hwan (Major of Semiconductor Physics, Korea Maritime University) ;
  • Jung, Mi-Na (Major of Semiconductor Physics, Korea Maritime University) ;
  • Jung, Myeong-Hun (Major of Semiconductor Physics, Korea Maritime University) ;
  • Lee, Ho-Jun (Major of Semiconductor Physics, Korea Maritime University) ;
  • Yang, Min (Major of Semiconductor Physics, Korea Maritime University) ;
  • Yao, Takafumi (CIR, Tohoku University) ;
  • Chang, Ji-Ho (Major of Semiconductor Physics, Korea Maritime University)
  • 정진우 (한국해양대학교 반도체 물리전공) ;
  • 안현철 (한국해양대학교 반도체 물리전공) ;
  • 이창용 (한국해양대학교 반도체 물리전공) ;
  • 김광희 (한국해양대학교 반도체 물리전공) ;
  • 최석철 (한국해양대학교 반도체 물리전공) ;
  • 이태훈 (한국해양대학교 반도체 물리전공) ;
  • 박승환 (한국해양대학교 반도체 물리전공) ;
  • 정미나 (한국해양대학교 반도체 물리전공) ;
  • 정명훈 (한국해양대학교 반도체 물리전공) ;
  • 이호준 (한국해양대학교 반도체 물리전공) ;
  • 양민 (한국해양대학교 반도체 물리전공) ;
  • ;
  • 장지호 (한국해양대학교 반도체 물리전공)
  • Published : 2005.05.27
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Abstract

The feasibility of graphoepitaxial growth of compound semiconductor has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was deposited on both substrates by sputtering, and thermal treatment was performed to improve the crystal quality and investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, very similarchange, the improvement of crystallinity, has been observed from both samples, except the sample annealed at the highest temperature. It implies the periodic structure affects the crystallinity of the films, and the graphoepitaxy of compound semiconductors is possible by using appropriate surface structure.

주기적인 구조를 갖는 Si (100) 기판을 이용하여 ZnO 박막을 graphoepitaxy 법으로 성장시키기 위한 가능성을 알아 보았다. photolithography에 의해 주기적 구조를 형성시켰으며, ZnO박막은 RF-sputter 법으로 증착하여 시료를 제작 하였다. 제작된 시료는 700$^{\circ}C$${\sim}$900$^{\circ}C$의 수증기 분위기에서 2시간동안 열처리 하여 열처리 온도에 대한 결정성의 변화를 고찰 하였다. 시료의 결정성은 Atomic Force Microscopy (AFM), PL(Photoluminescence)를 통해, 표면과 광학적 특성의 변화를 고찰하였다.

Keywords