Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- Volume 9 Issue 1
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- Pages.1026-1029
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- 2005
Graphoepitaxy of ZnO thin films by Zn evaporation
Graphoepitaxy법을 이용하여 SiO$_2$ 기판 위에 제작한 ZnO 박막의 특성에 관한 연구
- Kim, Gwang-Hui (Korea Maritime University, Major of Semiconductor Physics) ;
- Choi, Seok-Cheol (Korea Maritime University, Major of Semiconductor Physics) ;
- Lee, Tae-Hun (Korea Maritime University, Major of Semiconductor Physics) ;
- Jung, Jin-U (Korea Maritime University, Major of Semiconductor Physics) ;
- Park, Seung-Hwan (Korea Maritime University, Major of Semiconductor Physics) ;
- Jung, Mi-Na (Korea Maritime University, Major of Semiconductor Physics) ;
- Jung, Myeong-Hun (Korea Maritime University, Major of Semiconductor Physics) ;
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Yang, Min
(Korea Maritime University, Major of Semiconductor Physics) ;
- Yao, Takafumi (Institute for Materials Research, Tohoku University) ;
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Chang, Ji-Ho
(Korea Maritime University, Major of Semiconductor Physics)
- 김광희 (한국해양대학교 반도체 물리전공) ;
- 최석철 (한국해양대학교 반도체 물리전공) ;
- 이태훈 (한국해양대학교 반도체 물리전공) ;
- 정진우 (한국해양대학교 반도체 물리전공) ;
- 박승환 (한국해양대학교 반도체 물리전공) ;
- 정미나 (한국해양대학교 반도체 물리전공) ;
- 정명훈 (한국해양대학교 반도체 물리전공) ;
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양민
(한국해양대학교 반도체 물리전공) ;
- ;
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장지호
(한국해양대학교 반도체 물리전공)
- Published : 2005.05.27
Abstract
The feasibility of graphoepitaxial growth of compound semiconductors has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was formed on both substrates by thermal evaporation of elemental Zn and natural oxidation of the deposited Zn. Thermal treatment was performed to improve the crystal quality and to investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, the improvement of crystallinity as annealing temperature increase, has been observed from both samples. The samples, annealed at 800
Grating 이 형성된 SiO