UV 나노임프린트 리소그래피 공정에서 레지스트 도포의 최적화를 통한 잔류층 두께의 최소화

The Minimization of Residual Layer Thickness by using optimized dispensing method in UVnanoimprint Lithography Process

  • 김기돈 (한국기계연구원 나노공정장비연구센터) ;
  • 정준호 (한국기계연구원 나노공정장비연구센터) ;
  • 심영석 (한국기계연구원 나노공정장비연구센터) ;
  • 이응숙 (한국기계연구원 나노공정장비연구센터) ;
  • 김지현 (나노종합팹센터) ;
  • 조영근 (나노종합팹센터) ;
  • 홍성철 (웨스트팩 아소시에이트㈜)
  • Kim K.D. (Center for Nano Process and Tools, KIMM) ;
  • Jeong J.H. (Center for Nano Process and Tools, KIMM) ;
  • Sim Y.S. (Center for Nano Process and Tools, KIMM) ;
  • Lee E.S. (Center for Nano Process and Tools, KIMM) ;
  • Kim J.H. (National Nanofab Center) ;
  • Cho Y.K. (National Nanofab Center) ;
  • Hong S.C. (WESTPAC Associates, Inc.)
  • 발행 : 2005.06.01

초록

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. As with other nanoimprint methods, ultraviolet-nanoimprint lithography (UV-NIL) resolution appears to be limited only by template resolution, and offers a significant cost of ownership reduction when compared to other next generation lithography (NGL) methods such as EUVL and 157 nm lithography. The purpose of this paper is to suggest optimum values of control parameters of Imprio 100 manufactured by Molecular Imprint, Inc., which is the first commercially available UV-NIL tool, for sound nanoimprint. UV-NIL experiments were performed on Imprio 100 to find dispensing recipe for avoiding air entrapment. Dispensing recipe related to residual layer thickness and uniformity was optimized and 40 nm thick residual layer was achieved.

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