Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
- /
- Pages.331-332
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- 2005
Analysis of $O_3$ Concentration for Metal Oxide Thin Films Growth
금속 산화물 박막제작을 위한 오존 농도 분석
- Lim, Jung-Kwan (Dongshin Uni.) ;
- Park, Yong-Pil (Dongshin Uni.) ;
-
Jang, Kyung-Uk
(Kyungwon Coll.)
;
- Lee, Hee-Kab (KCCI)
- Published : 2005.11.10
Abstract
Ozone is ambient gas which is useful for the fabrication of metal oxide thin films under conditions of molecular beam epitaxy. Ozone is condensed by the adsorption method and its concentration is analyzed using the thermal decomposition method. The concentration of ozone exceeds 90 mol% and ozone is supplied for a sufficiently long time to grow oxide thin films. The ozone concentration is also evaluated using a quadrupole mass analyzer and the accuracy of this method is compared with the results of the thermal decomposition method.
Keywords
- ozone condensation system;
- thermal decomposition method;
- ozone concentration;
- quadrupole mass analyzer