한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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- Pages.109-110
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- 2005
PVD법으로 증착한 W-B-C-N 박막의 질소량에 따른 구조변화 연구
Structure Behavior of Sputtered W-B-C-N Thin Film for various nitrogen gas ratios
- 발행 : 2005.11.10
초록
We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to