Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Structure Properties of GaN films on Si(111) by MOCVD

Si 기판을 이용한 GaN 박막의 구조적 특성 연구

  • Kim, Deok-Kyu (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Kim, Kyoung-Min (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Kim, Jin-Sa (Kwangwon Univ. School of Electrical Engineering) ;
  • Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
  • 김덕규 (원광대학교 전기전자 및 정보공학부) ;
  • 김경민 (원광대학교 전기전자 및 정보공학부) ;
  • 김진사 (광운대학교 전기공학과) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2005.11.10
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Abstract

The characteristics of GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy have been investigated. The only control of AIN thickness was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick ($2.6{\mu}m$) CaN layer. X-ray diffraction measurementsare used to determine the effect of AIN thickness on the strain in the subsequent GaN layers. The 437arcsec linewidth on the (002) x-ray rocking curve also attest the high crystalline quality of GaN on Si (111).

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