한국반도체및디스플레이장비학회:학술대회논문집 (Proceedings of the Korean Society Of Semiconductor Equipment Technology)
- 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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- Pages.27-30
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- 2005
A Study of Electromechanical Nanotube Memory Device using Molecular Dynamics
- Lee Jun-Ha (Information Display Research Center, Sangmyung University) ;
- Lee Hoong-Joo (Information Display Research Center, Sangmyung University) ;
- Kwon Oh-Keun (Dept. of E-Commerce, Semyung University) ;
- Kang Jeong-Won (Nano Electronic Future Technology Lab., Chung-Ang University)
- 발행 : 2005.09.01
초록
A nanoelectromechanical (NEM) switching device based on carbon nanotube (CNT) was investigated using atomistic simulations. The model schematics for a CNT based three-terminal NEM switching device fabrication were presented. for the CNT-based three-terminal NEM switch, the interactions between the CNT-lever and the drain electrode or the substrate were very important. When the electrostatic force applied to the CNT-lever was the critical point, the CNT-lever was rapidly bent because of the attractive foroe between the CNT-lever and the drain. The energy curves for the pull-in and the pull-out processes showed the hysteresis loop that was induced by the adhesion of the CNT on the copper, which was the interatomic interaction between the CNT and the copper.
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