Method of manufacturing and characteristics of a functional AFM cantilever

기능성 원자간력 현미경 캔틸레버 제조 방법과 특성

  • 서문식 (전자부품연구원 나노정보에너지연구센터) ;
  • 이철승 (전자부품연구원 나노정보에너지연구센터) ;
  • 이경일 (전자부품연구원 나노정보에너지연구센터) ;
  • 신진국 (전자부품연구원 나노정보에너지연구센터)
  • Published : 2005.10.01

Abstract

To illustrate an application of the field effect transistor (FET) structure, this study suggests a new cantilever, using atomic force microscopy (AFM), for sensing surface potentials in nanoscale. A combination of the micro-electromechanical system technique for surface and bulk and the complementary metal oxide semiconductor process has been employed to fabricate the cantilever with a silicon-on-insulator (SOI) wafer. After the implantation of a high-ion dose, thermal annealing was used to control the channel length between the source and the drain. The basic principle of this cantilever is similar to the FET without a gate electrode.

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