Surface potential mapping using a functional AFEM cantilever

기능성 원자간력 현미경 캔틸레버를 이용한 표면 전위 측정

  • 서문석 (전자부품연구원 나노정보에너지연구센터) ;
  • 이철승 (전자부품연구원 나노정보에너지연구센터) ;
  • 이경일 (전자부품연구원 나노정보에너지연구센터) ;
  • 신진국 (전자부품연구원 나노정보에너지연구센터)
  • Published : 2005.10.01

Abstract

The surface potential variations are measured, according to the enhanced measuring speed and voltage sensitivity, using an active device, such as a field effect transistor $(FET)^{1-3}$. In this study, the surface potential was mapped in the patterned $SiO_2$ medium at room temperature. An improved FET-tip cantilever, which has a source, a drain, and an n- channel, was used in this study. The potential images were analyzed both in the contact mode and the non-contact mode, using only a pre-amplifier system instead of a lock-in the amplifier.

Keywords