Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Use of a Rapid Thermal Process Technique to study on the crystallization of amorphous Si films fabricated by PECVD

PECVD 방법으로 제조된 비정질 Si 박막의 RTP를 이용한 결정화 연구

  • Sim, C.H. (Electrical Electronic and Materials Lab, Myong Ji UNIV.) ;
  • Kim, H.N. (Electrical Electronic and Materials Lab, Myong Ji UNIV.) ;
  • Kim, S.J. (Electrical Electronic and Materials Lab, Myong Ji UNIV.) ;
  • Kim, J.W. (Electrical Electronic and Materials Lab, Myong Ji UNIV.) ;
  • Kwon, J.Y. (Electrical Electronic and Materials Lab, Myong Ji UNIV.) ;
  • Lee, H.Y. (Electrical Electronic and Materials Lab, Myong Ji UNIV.)
  • 심찬호 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 김하나 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 김성준 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 김정우 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 권정열 (명지대학교 전기공학과 전기전자재료연구실) ;
  • 이헌용 (명지대학교 전기공학과 전기전자재료연구실)
  • Published : 2005.07.18
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Abstract

TFT-LCD requires to use poly silicon for High resolution and High integration. Thin film make of Poly silicon on the excimer laser-induced crystallization of PECVD(plasma-enhanced chemical vapor deposition)-grown amorphous silicon. In the thin film hydrogen affects to a device performance from bad elements like eruption, void and etc. So dehydrogenation prior to laser exposure was necessary. In this study, use RTP(Rapid Thermal Process) at various temperature from $670^{\circ}C$ to $750^{\circ}C$ and fabricate poly-silicon. it propose optimized RTP window to compare grain size to use poly silicon's SEM pictures and crystallization to analyze Raman curved lines.

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