Optical and Heat Transfer Characteristics in a Rapid Thermal Annealing System for LCD Manufacturing Procedures

LCD 제작용 급속 열처리 시스템내의 광학 및 열전달 특성

  • 이성혁 (중앙대학교, 기계공학부) ;
  • 김형준 (홍익대학교, 신소재 화공시스템 공학부) ;
  • 신동훈 (비아트론(주)) ;
  • 이준식 (서울대학교, 기계항공공학부) ;
  • 최영기 (중앙대학교, 기계공학부) ;
  • 박승호 (홍익대학교, 기계시스템디자인공학부)
  • Published : 2004.04.28

Abstract

This article investigates the heat transfer characteristics in a RTA system for LCD manufacturing and suggests a way to evaluate the quality of a poly-Si film from the thin film optics analysis. The transient and one-dimensional conductive/radiative heat transfer equation considering wave interference effect is solved to predict surface temperatures of thin films. In dealing with radiative heat transfer, a one-dimensional two-flux method is used and the ray tracing method is also utilized to account for the wave interference effects. It is assumed that each interface is assumed diffusive but the spectral radiative properties are included. It is found that the selective heating region exists for various wavelengths and consequently may contribute to heat the poly-Si film. Using the formalism of the characteristic transmission matrix, the lumped structure reflectance, transmittance, and absorptance are calculated and they are compared with experimental data of the poly-Si film during the SPC process via the FE-RTA (Field-Enhanced RTA) technology.

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