Proceedings of the KAIS Fall Conference (한국산학기술학회:학술대회논문집)
- 2004.06a
- /
- Pages.172-175
- /
- 2004
Base Profile Simulation of SiGe Heterojunction Bipolar Transistor for High Frequency Applications
고주파수용 SiGe HBT의 베이스 프로파일 시뮬레이션에 관한 연구
- Lee W.H. (Information Display Research Center Department of Computer System Engineering Sangmyung University) ;
- Lee J.H. (Information Display Research Center Department of Computer System Engineering Sangmyung University) ;
- Park B.S. (Information Display Research Center Department of Computer System Engineering Sangmyung University) ;
- Lee H.J. (Information Display Research Center Department of Computer System Engineering Sangmyung University)
- 이우희 (상명대학교 정보디스플레이연구소 컴퓨터시스템공학과) ;
- 이준하 (상명대학교 정보디스플레이연구소 컴퓨터시스템공학과) ;
- 박병수 (상명대학교 정보디스플레이연구소 컴퓨터시스템공학과) ;
- 이홍주 (상명대학교 정보디스플레이연구소 컴퓨터시스템공학과)
- Published : 2004.06.01
Abstract
This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with
Keywords