Proceedings of the KAIS Fall Conference (한국산학기술학회:학술대회논문집)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
권호 표지

Base Profile Simulation of SiGe Heterojunction Bipolar Transistor for High Frequency Applications

고주파수용 SiGe HBT의 베이스 프로파일 시뮬레이션에 관한 연구

  • Lee W.H. (Information Display Research Center Department of Computer System Engineering Sangmyung University) ;
  • Lee J.H. (Information Display Research Center Department of Computer System Engineering Sangmyung University) ;
  • Park B.S. (Information Display Research Center Department of Computer System Engineering Sangmyung University) ;
  • Lee H.J. (Information Display Research Center Department of Computer System Engineering Sangmyung University)
  • 이우희 (상명대학교 정보디스플레이연구소 컴퓨터시스템공학과) ;
  • 이준하 (상명대학교 정보디스플레이연구소 컴퓨터시스템공학과) ;
  • 박병수 (상명대학교 정보디스플레이연구소 컴퓨터시스템공학과) ;
  • 이홍주 (상명대학교 정보디스플레이연구소 컴퓨터시스템공학과)
  • Published : 2004.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with $15\%$ triangular Ge profile shows higher cut-off frequency and DC current gain than that with $19\%$ trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively. The SiGe HBT has been fabricated using a production CVD reactor.

Keywords