Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The phase transition with electric field in chalcogenide thin films

칼코게나이드 박막의 전기적 펄스에 의한 상변화 연구

  • Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin, Kyoung (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • 양성준 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 이재민 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2004.05.06
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Abstract

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

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