한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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스퍼터링 법과 증발 법으로 제작한 초전도 박막의 비교

Comparison between Superconducting Thin Films Fabricated by Using the Sputtering and the Evaporation Method

  • 천민우 (동신대학교 전기전자공학과) ;
  • 박노봉 (동신대학교 전기전자공학과) ;
  • 양승호 (동신대학교 전기전자공학과) ;
  • 박용필 (동신대학교 전기전자공학과) ;
  • 김혜정 ((주) 프로텍 광부품기술연구소)
  • Cheon, Min-Woo (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Park, No-Bong (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Yang, Sung-Ho (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Park, Yong-Pil (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Kim, Hye-Jeong (PRO-TECH Co., Ltd.)
  • 발행 : 2004.04.30
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초록

The $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the sputtering method was compared with the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the evaporation method. In doing the ultra-low deposition because each element can exist on the substrate surface, both the sputtering method and the evaporation method could easily fabricate single phase of the Bi2212 phase. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

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