한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

In-situ SiN Mask를 이용한 GaN 성장 및 특성 연구

Growth and Characteristic of GaN using In-situ SiN Mask by MOCVD

  • 김덕규 (원광대학교 전기전자 및 정보공학부) ;
  • 정종엽 (원광대학교 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Kim, Deok-Kyu (Wonkwang Uni. Department of Electrical and Electronic & Information Engineering) ;
  • Jeong, Jong-Yub (Wonkwang Uni. Department of Electrical and Electronic & Information Engineering) ;
  • Park, Choon-Bae (Wonkwang Uni. Department of Electrical and Electronic & Information Engineering)
  • 발행 : 2004.04.24
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초록

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the characteristic of the GaN layer. We have changed the deposition time of SiN mask from 45s to 5min and obtain th optimum condition in 45s. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask and the carrier concentraion increased from $3.5{\times}10^{16}cm^{-3}$ to $1.8{\times}10^{17}cm^{-3}$. We have thus shown that the SiN mask improved significantly the optical properties of the GaN layer.

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