한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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- Pages.203-206
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- 2004
헬리콘 플라즈마를 이용한 $Ge_2Sb_2Te_5(GST)$ 상변화 재료의 식각 특성 검토
Etching Characteristics of $Ge_2Sb_2Te_5$ Using High-Density Helicon Plasma for the Nonvolatile Phase Change Memory Applications
- 윤성민 (한국전자통신연구원, 기반기술연구소) ;
- 이남열 (한국전자통신연구원, 기반기술연구소) ;
- 류상욱 (한국전자통신연구원, 기반기술연구소) ;
- 신웅철 (한국전자통신연구원, 기반기술연구소) ;
- 유병곤 (한국전자통신연구원, 기반기술연구소)
- Yoon, Sung-Min (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
- Lee, Nam-Yeal (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
- Ryu, Sang-Ouk (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
- Shln, Woong-Chul (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
- Yu, Byoung-Gon (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI))
- 발행 : 2004.11.11
초록
For the realization of PRAM,
키워드