한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

차세대 메모리 개발 동향(나노 플로팅 게이트 메모리)

Memory Device for the Next Generation(Nano-Floating Gate Memory)

  • Kil, Sang-Cheol (Korea Institute of Science and Technology Information) ;
  • Kim, Hjun-Suk (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
  • 발행 : 2004.11.11
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초록

NFGM(Nano-Floating Gate Memory) is a very prospective candidate memory for the next generation with MRAM, PRAM, PoRAM. Among these memory devices for the next generation, NFGM has a lot of merits such as a simple low cost fabrication process, improved retention time, lower operating voltages, high speed program/erase time and so on. Therefore, many intensive researches for NFGM have been performed to improve device performance and reliability, which depends on the ability to control particle size, size distribution, crystallity, areal particle density and tunneling oxide quality. In this paper, we investigate the researches for NFGM up to recently.

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