한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Step doping 농도를 가지는 SOI RESURF LDMOSFET의 전기적 특성 분석

Electrical characteristics of the SOI RESURF LDMOSFET with step doped epi-layer

  • 김형우 (한국전기연구원 전력반도체연구그룹) ;
  • 서길수 (한국전기연구원 전력반도체연구그룹) ;
  • 김지홍 (한국전기연구원 전력반도체연구그룹) ;
  • 김남균 (한국전기연구원 전력반도체연구그룹)
  • Kim, Hyoung-Woo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Seo, Kil-Soo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Ji-Hong (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Nam-Kyun (Korea Electrotechnology Research Institute, Power Semiconductor Group)
  • 발행 : 2004.07.05
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초록

Surface doped SOI RESURF LDMOSFET with recessed source region is proposed to improve the on- and off-state characteristics. Surface region of the proposed LDMOS structure is doped like step. The characteristics of the proposed LDMOS is verified by two-dimensional process simulator ATHENA and device simulator ATLAS[1]. The numerically calculated on-resistance($R_{ON}$) of the proposed LDMOS is $10.36\Omega-cm$ and breakdown voltage is 205V when $L_{dr}=7{\mu}m$ with step doped surface.

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